But surely when a device is ON, there will be a lot of current flowing.
Next, we need to match the Fermi energies.
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We no longer have to wind them up.
ON (UDS low) or OFF (UDS high).
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The flow of electrons and holes is in the opposite direction.
In the present example we are showing just one such level.
Let us return now to our original aim.
The solutions they came up with are shown in Fig.
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Surprisingly, it turns out that we still have some freedom.
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This is what an inverter is supposed to do.
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This is more similar to the traditional FETs.
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For the materials usually used, the width of the well comes out of the calculations (they are pretty complicated, one needs to solve simultaneously Poisson's equation in combination with Schrödinger's equation) as about 8 nm, comparable with atomic dimensions.
Having so many different types of FETs has tested the ingenuity of those whose job is to think up symbols for new devices.
The drains and gates are connected, and the source is connected to the substrate in each device.
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Is it not the best analogy a floodgate?
The slopes of the potential energy diagram are now such that electrons and holes move in the same direction.
Joining them and equating their Fermi levels leads to Fig.
So what kind of materials are we going to use?
What kind of properties should materials A and B, the two semiconductors to be joined in holy matrimony, possess?
Holes may then flow unimpeded from source to drain.
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We may call such structures homostructures in contrast to heterostructures, which consist of materials of different energy gaps.
The problem is then to persuade the electrons that, once created in the doped material, they should move over into.
We want to have high mobility.
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Energy diagram when the two materials in (c) are joined together.
Thus according to the rules of the game, the electron density there is much higher than in any other parts of the two materials.
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The transistor thus obtained has even got a name.
For the holes, there is no difference between the homojunction and the heterojunction; the amount of hole injection is the same in both cases.
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Thus, at zero gate voltage we can have a flow of electrons.
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The conclusion is that by using a heterojunction we can produce a transistor with properties superior to that of a homojunction.
It is known as HBT or Heterostructure Bipolar Transistor.
For the undoped material we shall choose one which has a high mobility.
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The characteristics of a MOSFET.
We can have our cake and eat it.
The energy diagram of semiconductor crystals.
Thus when Uin is low, Uout is high.
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There are naturally many varieties on the basic theme; I want to mention only one of them known as CMOS (complementary MOS) which rose to fame owing.
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So what can be done?
Principles of semiconductor devices (a).
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The Fermi energy of material A is quite close to the conduction band.
And of course the situation is similar when M1 is OFF and M2 is ON.
The essential thing is that when we turn to heterojunctions, the fates of electrons and holes are no longer tied together.
At this point the bandgap will suddenly change.
So, there is no doubt, heterojunctions offer more freedom in designing devices.
Let us see what happens when the input voltage Uin is approximately zero.
Applications for performing logic functions are obvious.
So this device could work as a fast switch or as an amplifier in analogue circuits.
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That can be easily done as shown in Fig.
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When the gates are closed there is only a trickle, but when they are open, there is a torrent of water.
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